Á¶È¸¼ö : 3737

µµ¼­¸í

Handbook of III-V Heterojunction Bipolar Transistors

ÀúÀÚ/¿ªÀÚ

William Liu

ÃâÆÇ»ç

Wiley

ºÐ¾ß

´Éµ¿¼ÒÀÚ

¸ñÂ÷/¼³¸í

The definitive hands-on guide to heterojunction bipolar transistors
In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers.

Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features:

A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines
A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications
Over 800 illustrations, showing how to use concepts and equations in the real world
An introduction to device physics and semiconductor basics
Many worked-out examples and end-of-chapter problem sets
Fully developed mathematical derivations
Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.

-------------------
Table Of Contents:

Basic Properties and Device Physics of III-V Materials.
Two-Terminal Heterojunction Devices.
D.C.
Current Gain.
Nonideal D.C.
Characteristics.
Thermal-Electrical Properties.
Collapse of Current Gain.
Failure Mechanisms and Reliability Issues.
Small-Signal Properties.
Epitaxial Layer Design.
Geometrical Layout Design.
Power Amplifier.
Distortion and Noise.
Switching Characteristics and Spice Models.
Transistor Fabrication.
Measured Transistor Performances.
Appendices.
Glossary of Symbols.
Index.

µî·ÏÀÚ

admin   ¼öÁ¤Çϱâ

¡å Ãßõ/ºñÆò(0)

¸ñ·ÏÀ¸·Î

ÀÌ Ã¥À» º¸½Å ºÐÀ̶ó¸é ¸ñÂ÷/ ³»¿ëÃß°¡¼³¸íÀ̳ª ºñÆò,Ãßõ/ºñÃßõ¿¡ ´ëÇÑ Àǻ縦 Ç¥½ÃÇØÁÖ¼¼¿ä! ÇØ´ç¼­Àû°ú °ü·ÃµÈ ³»¿ëÀÌ¸é ¾î¶² ³»¿ëÀÌµç »ó°ü¾ø½À´Ï´Ù.

¾ÆÀ̵ð :    ºñ¹Ð¹øÈ£ :


 

 Copyright by RF designhouse. All rights reserved.